aot20n60/AOTF20N60 600v,20a n-channel mosfet general description product summary v ds i d (at v gs =10v) 20a r ds(on) (at v gs =10v) < 0.37 w 100% uis tested 100% r g tested for halogen free add "l" suffix to part number: aot20n60l&AOTF20N60l symbol the aot20n60 & AOTF20N60 have been fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac-dc applications.by providi ng low r ds(on) , c iss and c rss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. units parameter absolute maximum ratings t a =25c unless otherwise noted 700v@150 aot20n60 AOTF20N60 g d s aot20n60 top view to-220f to-220 g d s g d s AOTF20N60 symbol v ds v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r q ja r q cs r q jc * drain current limited by maximum junction tempera ture. c/w 0.5 -- 2.5 0.3 maximum case-to-sink a 6.5 c/w units a c mj w w/ o c aot20n60 AOTF20N60 417 50 0.4 3.3 c/w 300 -55 to 150 continuous drain current t c =25c i d maximum junction-to-ambient a,d c 20 20* 12* 12 65 65 p d v 30 gate-source voltage v/ns mj t c =100c a 80 pulsed drain current c v units parameter drain-source voltage 600 aot20n60 AOTF20N60 maximum junction-to-case avalanche current c 630 single plused avalanche energy g 1260 parameter maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds junction and storage temperature range derate above 25 o c repetitive avalanche energy c t c =25c thermal characteristics 5 power dissipation b g d s aot20n60 top view to-220f to-220 g d s g d s AOTF20N60 rev2: dec 2011 www.aosmd.com page 1 of 6
aot20n60/AOTF20N60 symbol min typ max units 600 700 bv dss / ? tj 0.8 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3.2 3.8 4.5 v r ds(on) 0.29 0.37 w g fs 25 s v sd 0.69 1 v i s maximum body-diode continuous current 20 a i sm 80 a c iss 2448 3061 3680 pf c oss 190 273 360 pf c rss 13 22.8 35 pf r g 0.7 1.4 2.1 w q g 48 61 74 nc q gs 14 18 22 nc q gd 12 24 36 nc t d(on) 57 ns t r 125 ns t d(off) 128 ns v ds =5v, i d =250 m a v ds =480v, t j =125c v ds =0v, v gs =30v v drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c zero gate voltage drain current id=250 a, vgs=0v maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime turn-off delaytime v gs =10v, v ds =300v, i d =20a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =480v, i d =20a dynamic parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss zero gate voltage drain current v ds =600v, v gs =0v m a bv dss static drain-source on-resistance v gs =10v, i d =10a reverse transfer capacitance v gs =0v, v ds =25v, f=1mhz switching parameters i s =1a,v gs =0v v ds =40v, i d =10a forward transconductance turn-on rise time gate source charge gate drain charge diode forward voltage t d(off) 128 ns t f 88 ns t rr 384 480 580 ns q rr 8 10.5 13 m c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =20a,di/dt=100a/ m s,v ds =100v turn-off delaytime g turn-off fall time body diode reverse recovery time i f =20a,di/dt=100a/ m s,v ds =100v a. the value of r q ja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c, ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. l=60mh, i as =6.5a, v dd =150v, r g =25 ? , starting t j =25 c rev2: dec 2011 www.aosmd.com page 2 of 6
aot20n60/AOTF20N60 typical electrical and thermal characteristics 0 10 20 30 40 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 0 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 30 40 50 r ds(on) ( w ww w ) i d (a) figure 3: on - resistance vs. drain current and gate v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =10a 40 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0 10 20 30 40 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 0 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 30 40 50 r ds(on) ( w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =10a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j (c) figure 5:break down vs. junction temparature rev2: dec 2011 www.aosmd.com page 3 of 6
aot20n60/AOTF20N60 typical electrical and thermal characteristics 0 3 6 9 12 15 0 20 40 60 80 100 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =480v i d =20a 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 1s 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0 3 6 9 12 15 0 20 40 60 80 100 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =480v i d =20a 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area for AOTF20N60 (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0 5 10 15 20 25 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 11: current de-rating (note b) 1s 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area for aot20n60 (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s rev2: dec 2011 www.aosmd.com page 4 of 6
aot20n60/AOTF20N60 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.5 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance for aot20n60 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.3 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 13: normalized maximum transient thermal imp edance for AOTF20N60 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.5 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance for aot20n60 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.3 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev2: dec 2011 www.aosmd.com page 5 of 6
aot20n60/AOTF20N60 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id + l vgs vds bv i unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar rev2: dec 2011 www.aosmd.com page 6 of 6
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